Silicon Carbide Semiconductor Devices Market Key Takeaways
- Asia Pacific dominated the silicon carbide semiconductor devices market in 2024.
- North America is expected to witness the fastest growth in the coming years.
- By component, the power modules segment held the largest market share in 2024.
- By component, the FET/MOSFET transistors segment is projected to grow at the fastest rate during the forecast period.
- By product, the power semiconductors segment contributed the biggest market share in 2024.
- By product, the optoelectronic devices segment is likely to grow at a significant CAGR over the studied period.
- By wafer size, the 1 inch to 4 inches segment captured the highest market in 2024.
- By wafer size, the 10 inches and above segment is expected to expand at the fastest CAGR in the foreseeable period.
- By end-use, the automotive segment generated the major market share in 2024.
- By end-use, the energy and power segment is projected to grow at the highest CAGR in the near future.
Silicon Carbide Semiconductor Devices Market Overview
The Silicon Carbide Semiconductor Devices Market in the automotive sector, particularly in electric vehicles (EVs), is witnessing explosive growth. Silicon carbide devices, such as SiC MOSFETs and diodes, are becoming essential components in EV powertrains, battery management systems, and onboard chargers.
The superior performance of SiC devices—offering higher efficiency, faster switching, and better thermal conductivity compared to traditional silicon—makes them ideal for the demanding requirements of modern EV systems. As automakers shift focus toward increasing driving range and reducing energy losses, SiC semiconductors are emerging as a game-changer.
Silicon Carbide Semiconductor Devices Market Drivers
The major driver in this segment is the rising global demand for electric and hybrid vehicles, driven by environmental regulations and government incentives. Silicon carbide enables more compact and efficient power electronics, which in turn reduces the weight and improves the energy efficiency of EVs. Automotive manufacturers are increasingly turning to SiC to achieve competitive advantages in range, battery performance, and fast-charging capabilities.
Silicon Carbide Semiconductor Devices Market Opportunities
The transition to 800V EV architecture, which supports faster charging and improved energy efficiency, presents a significant opportunity for SiC semiconductor manufacturers. There is also potential in autonomous vehicle systems that require robust and high-performance electronics. Furthermore, partnerships between EV OEMs and semiconductor companies are opening new pathways for joint innovation and technology integration.
Silicon Carbide Semiconductor Devices Market Challenges
One of the key challenges is the high cost of SiC substrates and the complex manufacturing process, which limits affordability for mass-market EVs. Additionally, there is a limited supply chain for high-purity SiC wafers, which creates bottlenecks in production. Automakers must also manage the integration of SiC components into existing vehicle architectures, requiring adjustments in design and thermal management.
Silicon Carbide Semiconductor Devices Market Regional Insights
Asia-Pacific, led by China, is at the forefront of SiC adoption in EVs due to aggressive electrification targets and strong government support. Europe is also investing heavily in electric mobility, driven by climate goals and strict CO₂ regulations. North America is catching up, particularly with increased EV adoption in the United States and the rise of domestic battery and vehicle production.
Silicon Carbide Semiconductor Devices Market Recent Developments
Recent developments include long-term supply agreements between automotive OEMs and SiC device manufacturers to secure future component needs. Major automakers have announced integration of SiC in their next-generation EV platforms. In addition, advancements in 200mm SiC wafer technology are expected to drive cost efficiencies and production scale in the coming years.
- In January 2025, Wolfspeed, Inc., a global leader in silicon carbide technology, introduced its new Gen 4 technology platform, which enables design rooted in durability and efficiency, all while reducing system cost and development time. Wolfspeed’s highly flexible Gen 4 MOSFET technology platform supports long-term roadmaps for high-performance, application-optimized products.
- In December 2024, ONSemi agreed to acquire the Silicon Carbide Junction Field-Effect Transistor technology business, including the United Silicon Carbide subsidiary, from Qorvo for USD 115 million in cash. The acquisition will complement ONSemi’s extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers.
Silicon Carbide Semiconductor Devices Market Companies
- ALLEGRO MICROSYSTEMS, INC.
- Infineon Technologies AG
- ROHM Co., Ltd.
- STMicroelectronics N.V.
- ON SEMICONDUCTOR CORPORATION (on semi)
- WOLFSPEED, INC.
- Gene Sic Semiconductor
- TT Electronics plc.
- Mitsubishi Electric Corporation
- Powerex Inc.
- Toshiba Corporation
- FUJI ELECTRIC CO., LTD.
Segments Covered in the Report
By Component
- Schottky Diodes
- FET/MOSFET Transistors
- Integrated Circuits
- Rectifiers/Diodes
- Power Modules
- Others
By Product
- Optoelectronic Devices
- Power Semiconductors
- Frequency Devices
By Wafer Size
- 1 inch to 4 inches
- 6 inches
- 8 inches
- 10 inches & above
By End-use
- Automotive
- Electric Vehicles
- IC Automobiles
- Consumer Electronics
- Aerospace & Defense
- Medical Devices
- Data & Communication Devices
- Energy & Power
- EV Infrastructure
- Power Distribution & Utilities
- Others
By Region
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
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